BUK7212-55B,118

$1.92

Description：MOSFET N-CH 55V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ff6362851d68 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2453 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7212-55B,118

Overview

The BUK7212-55B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 75 A at 25 °C mounting base temperature, and a maximum total power dissipation of 167 W. The device features a typical on-state resistance of 10.2 mΩ at 25 °C and supports junction temperatures up to 185 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Compatible with standard level gate drive sources
Suitable for thermally demanding environments with a 185 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Ensure compatibility with standard gate drive levels as defined in the datasheet. Check for any recent updates to the product data sheet regarding qualification status or pinning information before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with high current capabilities in automotive or industrial settings. The DPAK package offers a balance between thermal performance and board space efficiency. Consider the 185 °C junction temperature rating for high-temperature operation scenarios where lower-rated devices would fail. Verify that the gate drive voltage aligns with the standard level requirements to ensure optimal on-state resistance performance.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel FETs. It is specifically engineered for automotive critical applications, adhering to AEC-Q101 qualification standards. The device utilizes advanced trench technology to achieve low on-state resistance while maintaining high current handling capabilities in a surface-mount DPAK package suitable for automated assembly processes.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying pinning, electrical characteristics, and thermal performance against the original specification.