BUK7222-55A,118

$1.05

Description：MOSFET N-CH 55V 48A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:df30e4bff472 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 48A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1597 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7222-55A,118

Overview

The BUK7222-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 48 A at 25 °C mounting base temperature. The device supports a total power dissipation of 103 W and operates with a junction temperature up to 175 °C. Key electrical characteristics include a maximum on-state resistance of 44 mΩ at 175 °C and non-repetitive avalanche energy capability of 160 mJ.

Feature Summary

Qualified for automotive critical applications in compliance with AEC-Q101 standards
Optimized for low conduction losses through reduced on-state resistance
Compatible with standard level gate drive sources
Designed for thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V load switching
Automotive and general purpose power switching
Motors, lamps and solenoids control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for circuits requiring robust N-channel switching with standard gate drive compatibility. Ensure thermal management strategies account for the 175 °C junction limit and verify that the application does not exceed the 55 V drain-source voltage or 48 A continuous current limits under expected operating temperatures.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. It is housed in the SOT428 (DPAK) surface-mounted package, which provides a mounting base connected to the drain for efficient heat dissipation. The device is engineered for high reliability in automotive and industrial power switching environments.

Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout or generic package similarity without confirming electrical parameter alignment and qualification status.