BUK7225-55A,118

$0.28

Description：N-CHANNEL TRENCHMOS STANDARD LEV
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:b3212729286d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL TRENCHMOS STANDARD LEV
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：43A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1310 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：94W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7225-55A,118

Overview

The BUK7225-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 43 A at 25 °C mounting base temperature. The device supports a total power dissipation of 94 W and operates with junction temperatures up to 175 °C. Key electrical characteristics include a maximum on-state resistance of 50 mΩ at 175 °C and non-repetitive avalanche energy capability of 123 mJ.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for critical applications
Optimized for low conduction losses through reduced on-state resistance
Compatible with standard level gate drive sources
Designed for thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V load switching
Automotive and general purpose power switching
Motor, lamp, and solenoid control circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration and compliance status. Confirm that the component meets all required automotive qualification standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring robust performance in automotive or industrial power switching contexts. Ensure the thermal management strategy accommodates the specified power dissipation limits and junction temperature ratings to maintain reliability under varying operating conditions.

Part Context

This part belongs to the Nexperia N-channel TrenchMOS standard level FET family. It is housed in the SOT428 (DPAK) surface-mounted package, which provides a mounting base connected to the drain for efficient heat dissipation. The device is designed for high-current applications requiring reliable switching capabilities.