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Product Detailed Parameters
- Description：PFET, 75A I(D), 75V, 0.0056OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7.446 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7506-75B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 300 W under the same conditions. Its maximum on-state resistance is 5.6 mΩ at 25 °C with a gate-source voltage of 10 V. The component operates within a junction temperature range of -55 °C to 175 °C and is housed in a TO-220AB package.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current design requirements, as product availability may change. Ensure all electrical parameters meet the system's absolute maximum ratings before integration. Cross-reference the datasheet revision date to guarantee access to the most recent technical specifications and legal disclaimers.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance. The TO-220AB package facilitates heatsink mounting for effective heat dissipation. Verify that the gate drive voltage meets the standard level requirement for optimal on-state resistance. Consider the avalanche energy rating when designing circuits subject to inductive load switching or transient events.
Part Context
This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS FETs. These devices are engineered for automotive and industrial power switching. The series utilizes advanced trench gate technology to achieve low on-resistance and high efficiency. The TO-220AB package provides a reliable mechanical interface for high-power thermal management solutions.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Ensure any replacement maintains compatibility with the TO-220AB package and meets the 75 V / 75 A electrical specifications.
