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Product Detailed Parameters
- Description：MOSFET N-CH 100V 63A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4373 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7520-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a 100 V drain-source voltage rating and supports a continuous drain current of 63 A at a mounting base temperature of 25 °C. The device offers a maximum on-state resistance of 50 mΩ at 175 °C junction temperature and handles up to 200 W total power dissipation. Qualified to the AEC-Q101 standard, it operates with a junction temperature range from -55 °C to 175 °C.
Feature Summary
- Compliant with the AEC-Q101 automotive qualification standard for critical applications.
- Designed for thermally demanding environments with an extended 175 °C operating capability.
- Compatible with standard level gate drive sources for simplified control integration.
Applications
- Switching 12 V, 24 V, and 42 V loads
- Automotive and general purpose power switching
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the component status remains active within the manufacturer's longevity program before finalizing design-in decisions. Ensure thermal management solutions align with the specified junction-to-mounting base thermal resistance limits.
Selection Notes
Select this component for high-current switching applications requiring robust automotive reliability. The TO-220AB package facilitates heatsink mounting for effective thermal dissipation. Evaluate the 175 °C junction temperature limit against system thermal constraints to ensure long-term operational stability under peak load conditions.
Part Context
This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS FETs. These devices are engineered for high-performance automotive systems where durability and low conduction losses are critical. The series utilizes advanced trench technology to achieve superior electrical characteristics compared to planar alternatives.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and thermal resistance values when considering alternative packages or manufacturers to ensure mechanical and electrical compatibility.
