ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 120A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：293W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK753R5-60E,127 is an N-channel silicon power MOSFET manufactured by NXP Semiconductors. It features a drain-source breakdown voltage of 60V and supports a continuous drain current of 120A at case temperature (Tc) of 25°C. The device exhibits a maximum on-state resistance (Rds(on)) of 3.5mΩ. It is housed in a TO-220AB plastic package with three pins, suitable for through-hole mounting. The component is designed for high-power switching applications requiring low conduction losses.
Feature Summary
- N-channel enhancement mode metal-oxide semiconductor field-effect transistor
- Low on-state resistance for efficient power handling
- Robust thermal performance in TO-220AB package
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the complete part number including the suffix ,127 to ensure correct reel packaging configuration. Confirm the manufacturer is NXP Semiconductors or its authorized entity. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions before final integration into design specifications.
Selection Notes
Select this component when a 60V rating and 120A continuous current capability are required. Ensure the thermal management solution can handle the power dissipation associated with the specified Rds(on) at the operating duty cycle. Verify that the TO-220AB footprint matches the PCB layout constraints.
Part Context
This device belongs to the BUK75 series of TrenchMOS power MOSFETs from NXP. These components are engineered for general-purpose power switching applications where low gate charge and fast switching speeds are beneficial. The series offers various voltage and current combinations within the same package family to simplify inventory management.
Replacement Considerations
Direct substitutes must match the 60V/120A/TO-220AB specification. Verify pinout compatibility and thermal resistance values. Cross-reference with other NXP BUK75 variants or equivalent offerings from other manufacturers ensuring identical electrical parameters and package dimensions.
