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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：230W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7605-30A,118 is an N-channel enhancement mode standard level field-effect power transistor manufactured by NXP USA Inc. utilizing TrenchMOS technology for low on-state resistance. It features a 30 V drain-source voltage rating and supports a continuous DC drain current of 75 A at 25 °C. The device offers a maximum total power dissipation of 230 W and a junction temperature capability up to 175 °C. Packaged in the SOT404 surface-mount envelope, it provides a typical RDS(ON) of 5 mΩ at VGS = 10 V.
Feature Summary
- Utilizes TrenchMOS technology to achieve very low on-state resistance for efficient switching performance.
- Designed with a plastic envelope suitable for surface mounting applications.
- Capable of operating at high junction temperatures up to 175 °C.
Applications
- Automotive switching applications
- General purpose power switching
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with SOT404 footprint requirements during PCB layout. Confirm thermal management strategies align with the specified junction-to-ambient resistance values for the intended operating environment.
Selection Notes
Select this component for designs requiring robust N-channel switching with high current handling capabilities. Consider the 30 V voltage rating and 75 A current capacity when sizing for load requirements. Evaluate the thermal resistance characteristics to determine appropriate heatsinking or copper area allocation for the SOT404 package.
Part Context
This part belongs to the TrenchMOS family of standard level FETs from Philips Semiconductors (now NXP). These devices are engineered for automotive and general-purpose markets where reliability and low conduction losses are critical. The SOT404 package provides a compact solution for surface-mount assembly processes.
Replacement Considerations
Consult official substitution lists for equivalent N-channel MOSFETs with matching 30 V ratings and comparable current capabilities. Verify pinout compatibility with the SOT404 configuration before implementation.
