BUK7615-100A,118

Description：MOSFET N-CH 100V 75A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:9130350ef957 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 75A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7615-100A,118

Overview

The BUK7615-100A,118 is an N-channel enhancement mode standard level field-effect power transistor manufactured by Nexperia (formerly Philips Semiconductors). It utilizes TrenchMOS technology to achieve very low on-state resistance. The device is housed in a SOT404 plastic envelope suitable for surface mounting. Key electrical parameters include a drain-source voltage of 100 V, a continuous DC drain current of 75 A at 25 °C, and a maximum total power dissipation of 230 W. The typical drain-source on-state resistance is 15 mΩ at VGS = 10 V.

Feature Summary

Utilizes TrenchMOS technology for low on-state resistance
Designed for automotive and general purpose switching applications
Capable of operation up to 175 °C junction temperature

Applications

Automotive systems
General purpose power switching
Motors, lamps and solenoids control

Procurement Notes

Verify the manufacturer origin as Nexperia or Philips Semiconductors when sourcing this component. Confirm the package type is SOT404 (D2PAK) and that the part number matches BUK7615-100A,118 exactly. Ensure static protection measures are maintained during handling due to gate sensitivity.

Selection Notes

Select this component for high-current switching applications requiring low conduction losses. The 100 V rating and 75 A current capability suit robust industrial and automotive environments. Consider the thermal resistance characteristics and ensure adequate heatsinking to manage the 230 W power dissipation potential within safe operating limits.

Part Context

This part belongs to the BUK76xx series of N-channel TrenchMOS transistors from Nexperia. These devices are characterized by their use of trench gate technology to minimize resistance while maintaining high voltage blocking capabilities. The series is widely used in power management circuits where efficiency and thermal performance are critical.

Replacement Considerations

Direct substitutes may include other N-channel MOSFETs with similar 100 V ratings and comparable RDS(ON) values in a D2PAK package. Verify pinout compatibility and thermal specifications before substitution.