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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.45mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9.58 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：324W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK761R4-30E,118 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology within a SOT404 package and is qualified to the AEC-Q101 standard for automotive applications. The device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 62 A at 25°C. It exhibits a maximum on-state resistance (Rds_on) of 1.4 mΩ at a gate-source voltage (Vgs) of 10 V. The component supports junction temperatures up to 175°C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 compliant for high-performance automotive environments
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding conditions with 175°C rating
- True standard level gate drive characteristics
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring low conduction losses in 12 V automotive architectures. The standard level gate threshold simplifies driver interface requirements compared to logic-level alternatives. Ensure thermal management strategies accommodate the 175°C junction capability and verify that the SOT404 footprint aligns with the target PCB layout constraints.
Part Context
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. The series is engineered for high-current switching applications where efficiency and reliability are critical. The BUK761R4 variant specifically targets the 30 V voltage class, offering a balance between low on-resistance and manageable gate charge for standard automotive control units.
Replacement Considerations
Direct replacements must match the 30 V Vdss, 62 A Id, and 1.4 mΩ Rds_on specifications while maintaining the SOT404 package. Verify that any substitute also holds AEC-Q101 qualification if automotive compliance is required. Check pinout compatibility to ensure direct interchangeability without circuit redesign.
