BUK7660-100A,118

$1.28

Description：MOSFET N-CH 100V 26A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:5c491cc989b0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 26A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：60mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1377 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：106W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7660-100A,118

Overview

The BUK7660-100A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 26 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 160 mΩ at 25 °C and 150 mΩ at 175 °C junction temperature under specified conditions. Total power dissipation reaches 106 W at 25 °C. It supports non-repetitive avalanche energy of 110 mJ and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards
Optimized for low conduction losses through reduced on-state resistance
Compatible with standard level gate drive sources
Engineered for thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active for new designs by consulting the latest Nexperia product data sheet. Ensure application conditions align with the absolute maximum ratings provided in the official documentation to prevent device stress or failure during operation.

Selection Notes

Select this component for circuits requiring robust N-channel switching with standard gate drive compatibility. The low on-state resistance minimizes thermal generation during conduction phases. Verify that the expected load currents and voltages remain within the safe operating area limits defined in the datasheet curves to ensure reliable performance across the specified temperature range.

Part Context

This part belongs to the BUK766 series of N-channel TrenchMOS FETs manufactured by Nexperia. These devices are specifically engineered for high-performance automotive applications where reliability under harsh thermal conditions is critical. The series utilizes advanced trench technology to achieve superior conductivity compared to planar structures.