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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 25 V
- FET Feature：Current Sensing
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
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Overview
The BUK7C08-55AITE is an N-channel TrenchPLUS standard level FET utilizing TrenchMOS technology. It features a D2PAK (SOT427) package with seven leads, including Kelvin source and mounting base connections. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current up to 130 A at 25 °C, and a maximum on-state resistance of 6.8 mΩ at 50 A. The device integrates a temperature sense diode and ESD protection diodes, supporting junction temperatures up to 175 °C.
Feature Summary
- Integrates a temperature sensor for responsive thermal monitoring
- Includes built-in ESD protection diodes for electrostatic robustness
- Features low on-state resistance to minimize conduction losses
- Contains an integrated current sensor to reduce component count
Applications
- Automotive and general purpose power switching
- Fan control systems
- Electrical Power Assisted Steering (EPAS)
- Variable Valve Timing for engines
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm compliance with automotive qualification standards relevant to your application environment. Check the latest product status on the manufacturer website as specifications may change. Ensure thermal management design accounts for the specified power dissipation limits at operating temperatures.
Selection Notes
Select this component for high-current automotive applications requiring integrated diagnostics. The inclusion of current sensing and temperature monitoring simplifies system architecture by reducing external components. Evaluate the thermal resistance characteristics against your heat sink or PCB footprint constraints to ensure reliable operation under peak load conditions.
Part Context
This part belongs to Nexperia's TrenchPLUS series of N-channel MOSFETs designed for automotive critical applications. It utilizes advanced TrenchMOS technology to achieve high performance in a compact plastic surface-mounted package. The series is qualified to AEC-Q101 standards, ensuring reliability in demanding environments.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Engineers should evaluate other Nexperia TrenchPLUS devices with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
What is the function of the integrated temperature sense diode?
The integrated temperature sense diode allows for responsive monitoring of the junction temperature, enabling thermal protection and management within the circuit.
How does the integrated current sensor benefit the design?
The integrated current sensor reduces the overall component count by eliminating the need for external shunt resistors or Hall effect sensors for current monitoring.
