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Product Detailed Parameters
- Description：MOSFET N-CH 60V 60A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2007 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK7M9R9-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a continuous drain current of 60 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 9.9 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 79 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high performance automotive applications according to the AEC-Q101 standard.
- Designed for thermally demanding environments with a maximum junction temperature rating of 175 °C.
- Features true standard level gate operation with a threshold voltage greater than 1 V at elevated temperatures.
- Incorporates repetitive avalanche rating for enhanced ruggedness.
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering part number matches the required marking code '79E960'. Confirm that the LFPAK33 package variant aligns with PCB footprint requirements. Cross-reference thermal resistance values with actual board layout conditions before finalizing procurement orders.
Selection Notes
Select this component when a single N-channel MOSFET with low on-resistance is required for 60 V automotive circuits. The LFPAK33 package offers robust current handling and thermal performance suitable for surface mount assembly. Consider the standard level gate drive requirements, as the device is optimized for VGS = 10 V operation. Evaluate the repetitive avalanche energy limits if the application involves inductive load switching or transient voltage events.
Part Context
This device belongs to the Nexperia BUK7M series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low conduction losses within the compact LFPAK33 plastic surface-mounted package. The series is engineered to meet stringent automotive reliability standards while providing efficient power switching capabilities for various vehicle subsystems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. No public substitute part numbers are confirmed in the provided source material.
