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The Nexperia BUK7Y3R5-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a LFPAK56 (SOT669) package. It features a 40 V drain-source voltage, 120 A continuous drain current, and a maximum on-state resistance of 3.5 mΩ at 25 °C. The device supports junction temperatures up to 175 °C with a total power dissipation of 115 W. Key dynamic parameters include a typical gate charge of 53 nC and a fall time of 9 ns.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets the required AEC-Q101 qualification status for your target automotive application. Cross-reference the marking code 73H540 with the datasheet to authenticate the part number and manufacturing date code upon receipt.
Select this component when designing circuits requiring low conduction losses and high current handling within a compact surface-mount footprint. The tight threshold voltage limits facilitate easy paralleling of multiple devices for higher current capacity. Ensure the PCB thermal design can support the mounting base temperature requirements to maintain the specified 120 A continuous current rating.
This device belongs to Nexperia's BUK7Y series of automotive-grade power MOSFETs. It utilizes the LFPAK56 package, also known as Power-SO8 or SOT669, which integrates a copper clip for superior thermal management. The series is designed specifically for demanding automotive environments requiring robustness and high efficiency.
Direct substitutes include BUK7Y2R5-40HX and BUK7Y1R8-40HX from the same family. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure the replacement part maintains the required AEC-Q101 qualification and package dimensions for the existing PCB layout.
The BUK7Y3R5-40HX is rated for a maximum junction temperature of 175 °C, making it suitable for thermally demanding automotive environments.
The LFPAK56 package features Gull Wing leads that absorb mechanical stress during thermal cycling, providing higher board level reliability than traditional QFN packages.
Yes, the device exhibits improved avalanche capability compared to standard TrenchMOS technologies due to its Trench 9 Superjunction platform.