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Product Detailed Parameters
- Description：MOSFET N-CH 40V 79A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：26.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：94.3W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK7Y7R6-40EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 79 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 7.6 mΩ at 10 V gate drive and 20 A drain current. Total power dissipation reaches 94.3 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for high-performance applications
- Capable of operating in thermally demanding environments with a 175 °C junction temperature rating
- Features true standard level gate drive characteristics maintaining threshold voltage above 1 V at elevated temperatures
- Rated for repetitive avalanche energy handling
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the requested part number matches the required automotive grade specifications. Ensure compatibility with the LFPAK56 footprint during PCB layout. Validate thermal management requirements against the provided junction-to-mounting base thermal resistance data before finalizing procurement.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high current handling within a compact surface-mount form factor. The low on-state resistance minimizes conduction losses in power switching circuits. Consider the 175 °C thermal rating for applications with limited cooling options. Verify that the gate drive voltage aligns with the standard level threshold requirements for optimal performance.
Part Context
This device belongs to Nexperia's portfolio of N-channel TrenchMOS standard level MOSFETs designed for automotive use. It utilizes silicon technology to deliver high performance in a plastic single-ended surface-mounted package. The product line is engineered to meet stringent automotive industry standards, ensuring durability and consistent electrical characteristics across varying environmental conditions.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pin configurations and thermal characteristics when evaluating potential replacements. Ensure any substitute component meets or exceeds the original AEC-Q101 qualification status and package dimensions.
