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Product Detailed Parameters
- Description：PFET, 73A I(D), 55V, 0.015OHM, 1
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3307 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：149W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9514-55A,127 is a single N-channel Power MOSFET manufactured by Nexperia. It utilizes High-Performance Automotive (HPA) TrenchMOS technology to deliver low on-state resistance and high switching efficiency. The device is designed for robust performance in thermally demanding environments, supporting a maximum junction temperature of 175°C. It is qualified to the AEC-Q101 standard, ensuring reliability for critical automotive applications. The component features a plastic surface-mount package suitable for automated assembly processes.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards
- High thermal stability with a 175°C junction temperature rating
- Low conduction losses enabled by HPA TrenchMOS technology
Applications
- 12 V loads in automotive systems
- General purpose power switching
- Motor, lamp, and solenoid control
Procurement Notes
Verify current availability status as the product lifecycle indicates it is approaching end-of-life. Confirm that the specific ordering suffix matches the required package variant. Ensure design-in compatibility with existing PCB footprints before finalizing procurement plans due to potential supply constraints.
Selection Notes
Select this component for designs requiring automotive reliability and high thermal endurance. The logic-level gate drive capability simplifies driver circuit requirements. Evaluate the trade-off between the low on-resistance and the package's thermal dissipation capabilities for the specific load conditions.
Part Context
This part belongs to Nexperia's BUK95 series of automotive-grade Power MOSFETs. The series is characterized by its use of advanced trench technology to achieve superior performance metrics compared to standard planar devices. These components are widely integrated into vehicle electrical architectures where space and thermal management are critical constraints.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute with non-automotive grade equivalents without validating AEC-Q101 compliance and thermal ratings.
