BUK9606-55B,118

$0.70

Description：MOSFET N-CH 55V 75A D2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:ab8d57d9ba3a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK9606-55B,118

Overview

The BUK9606-55B,118 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports logic level gate drive sources and operates with junction temperatures up to 175 °C. It includes non-repetitive avalanche energy capability of 679 mJ and total power dissipation of 258 W.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities in automotive or industrial environments. Ensure the gate drive voltage aligns with the logic level requirements to minimize on-state resistance. Consider the thermal management strategy given the 175 °C junction temperature limit and the package's power dissipation characteristics.

Part Context

This part belongs to Nexperia's BUK96 series of N-channel TrenchMOS FETs. These devices are engineered for high-performance switching applications, combining low on-resistance with high avalanche ruggedness. The D2PAK package provides efficient thermal transfer through the mounting base, which is internally connected to the drain terminal.

Replacement Considerations

Check for direct replacements within the BUK96 series that match the 55 V rating and D2PAK footprint. Verify pinout compatibility and ensure any substitute meets the same Q101 automotive qualification standards if used in critical applications.