BUK9608-55,118

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:6f7ae1da4886 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：6900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：187W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9608-55,118

Overview

The BUK9608-55,118 is an N-channel enhancement mode logic level field-effect power transistor utilizing Philips TrenchMOS technology. It features very low on-state resistance and integral Zener diodes for ESD protection up to 2kV. The device is housed in a SOT404 plastic envelope suitable for surface mounting. Key electrical parameters include a drain-source voltage of 55 V, a DC drain current of 75 A at 25°C, and a maximum total power dissipation of 187 W. The typical drain-source on-state resistance is 8 mΩ at VGS = 5 V.

Feature Summary

TrenchMOS technology enables very low on-state resistance for efficient switching.
Logic level gate drive capability allows direct interfacing with standard logic circuits.
Integral Zener diodes provide electrostatic discharge (ESD) protection up to 2 kV.
SOT404 package design facilitates surface mounting applications.

Applications

Automotive switching applications
General purpose switching applications

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against the Philips Semiconductors product specification. Confirm the package type is SOT404 and the part number matches BUK9608-55. Ensure handling precautions for electrostatic-discharge sensitive devices are followed during installation to prevent damage to the MOS gate oxide.

Selection Notes

Select this component for applications requiring high current switching with low conduction losses. The logic level gate threshold makes it suitable for control circuits operating at lower voltages. Consider the thermal resistance characteristics and derating curves when designing heat dissipation solutions for continuous or pulsed operation scenarios.

Part Context

This device belongs to the Philips Semiconductors TrenchMOS family of N-channel enhancement mode transistors. The BUK9608-55 variant specifically targets automotive and general-purpose markets. The '118' suffix indicates the specific tape and reel packaging configuration provided by the manufacturer.