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The BUK963R2-40B,118 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes a D2PAK plastic surface-mounted package (SOT404). The device supports a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. Total power dissipation reaches 300 W under the same conditions. The typical drain-source on-state resistance is 2.7 mΩ at VGS = 5 V and ID = 25 A. It features a junction temperature range from -55 °C to 175 °C.
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Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. The logic level gate drive characteristic simplifies control interface design by allowing direct connection to standard logic outputs without additional driver stages. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance to maintain reliability under continuous load conditions.
This part belongs to the BUK963 series of N-channel MOSFETs from Nexperia. It shares the SOT404 package form factor with other members like the BUK963R1-40E but differs in electrical specifications such as on-resistance and current ratings. The series is designed for robust performance in automotive and industrial power switching environments.
Direct substitutes include parts with identical pinout and similar electrical characteristics, such as the BUK963R1-40E. Verify that replacement components meet the required AEC-Q101 qualification and thermal performance standards for the specific application environment.