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Product Detailed Parameters
- Description：MOSFET N-CH 55V 12A SOT223
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1594 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-73
- Package / Case：TO-261-4, TO-261AA
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Overview
The BUK9832-55A,115 is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a 55 V drain-source voltage rating and supports a continuous drain current of 12 A at 25 °C solder point temperature. The device exhibits low on-state resistance, typically 27 mΩ at VGS = 5 V and ID = 8 A. It operates within a junction temperature range of -55 °C to 150 °C and utilizes the SOT223 (SC-73) surface-mount package.
Feature Summary
- Logic level gate drive compatibility suitable for standard logic sources
- Automotive qualification compliant with Q101 standards
- Low conduction losses enabled by TrenchMOS technology
Applications
- 12 V and 24 V load switching
- Automotive power switching circuits
- General purpose power switching
- Motor, lamp, and solenoid control
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm the component status against the latest Nexperia documentation as product availability may change. Ensure the design accounts for the absolute maximum ratings, particularly regarding thermal dissipation limits and peak pulsed currents, to maintain reliability in the intended application environment.
Selection Notes
Select this component when a robust N-channel MOSFET with automotive qualification is required for 12 V or 24 V systems. The logic level threshold allows direct drive from common microcontrollers or logic gates without additional driver stages. Consider the thermal resistance characteristics and package size constraints when designing the PCB layout for adequate heat dissipation.
Part Context
This part belongs to the BUK9832 series of N-channel enhancement mode field-effect transistors manufactured by Nexperia. The series utilizes TrenchMOS technology to achieve low on-resistance and high efficiency. These devices are specifically engineered to meet the rigorous demands of automotive electronics, ensuring durability and performance under varying environmental conditions.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical specifications carefully before substitution.
