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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：7565 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：258W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E06-55B,127 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a plastic I2PAK (SOT226) package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with typical values of 4.8 mΩ at VGS=10V and 5.1 mΩ at VGS=5V. Total power dissipation reaches 258 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 679 mJ.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- Compatible with logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. The I2PAK package provides efficient heat dissipation suitable for power densities up to 258 W. Ensure gate drive voltages align with the specified threshold characteristics for optimal RDSon performance.
Part Context
This part belongs to Nexperia's TrenchMOS family, designed for high-efficiency power switching. The I2PAK (SOT226) package offers a low-profile form factor compared to standard TO-220 variants while maintaining similar thermal capabilities. It serves as a discrete solution for replacing older bipolar or MOSFET technologies in automotive and industrial power stages.
Replacement Considerations
Check pinout compatibility between SOT226 and potential substitutes. Verify that replacement devices meet the 55 V VDS and 75 A ID requirements. Confirm AEC-Q101 compliance if the application mandates automotive qualification standards.
