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Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A I2PAK
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：16400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E1R8-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology within an I2PAK (SOT226) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 1.55 mΩ at VGS = 5 V and ID = 25 A. It supports a total power dissipation of 349 W and operates with junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with Vgst(th) rating greater than 0.5V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Confirm that the component status aligns with current production requirements, as datasheet statuses may change. Ensure thermal management designs account for the specified mounting base temperature dependencies. Cross-reference the latest revision date to guarantee access to updated electrical characteristics and legal disclaimers before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring low on-state resistance and high current handling in automotive environments. The true logic level gate characteristic allows effective drive from standard logic levels even at elevated temperatures. Consider the I2PAK package's thermal capabilities and ensure adequate heat sinking to maintain junction temperatures within safe operating limits during peak load conditions.
Part Context
This part belongs to the N-channel TrenchMOS logic level FET family, engineered for automotive-grade durability. It integrates advanced silicon technology to minimize conduction losses while maintaining high switching speeds. The qualification to AEC-Q101 ensures suitability for rigorous automotive testing protocols, making it a reliable choice for power management tasks in modern vehicle electronics architectures.
Replacement Considerations
Consult official substitution lists for verified alternatives. Ensure any replacement matches the SOT226 package dimensions and pinout configuration. Verify that substitute components meet or exceed the 40 V breakdown voltage and 120 A current ratings. Confirm compatibility with existing thermal management solutions and gate drive requirements.
