BUK9M42-60EX

$0.41

Description：MOSFET N-CH 60V 22A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:43d2a951f9b7 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 22A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：37mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：867 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：44W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M42-60EX

Overview

The Nexperia BUK9M42-60EX is a logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a continuous drain current of 22 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 42 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 44 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Qualified for high-performance automotive applications in compliance with the AEC-Q101 standard.
Features true logic level gate operation, maintaining threshold voltage above 0.5 V even at elevated junction temperatures of 175 °C.
Designed for thermally demanding environments with a maximum operating temperature rating of 175 °C.
Capable of handling repetitive avalanche energy events without failure.

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the requested part number matches the exact electrical characteristics required for the target application. Cross-reference the datasheet revision date to confirm the most recent product status and technical updates are being utilized during design integration.

Selection Notes

Select this component when low gate drive voltage compatibility is required alongside robust thermal performance. The LFPAK33 package provides efficient heat dissipation suitable for surface mount assembly. Consider the repetitive avalanche rating if the circuit topology involves inductive load switching. Verify that the 60 V breakdown voltage aligns with the system's maximum transient voltage requirements.

Part Context

This device belongs to the Nexperia BUK9M series of N-channel enhancement mode MOSFETs. These components are engineered using advanced TrenchMOS technology to optimize the balance between conduction losses and switching speeds. The series targets automotive and industrial markets where reliability under harsh thermal conditions is critical.