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The BUK9M9R5-40HX is an automotive qualified logic level N-channel MOSFET utilizing Trench 9 superjunction technology. It features a maximum drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 9.5 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 55 W under specified conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the delivered components match the required AEC-Q101 qualification status for automotive integration. Ensure compatibility with LFPAK33 footprint dimensions during PCB layout finalization. Cross-reference marking codes with the latest datasheet revisions to prevent counterfeit or obsolete stock acceptance.
Select this component for designs requiring logic level gate drive compatibility in compact automotive modules. The LFPAK33 package offers a small footprint suitable for space-constrained layouts while maintaining high current handling. Evaluate thermal management strategies based on the junction-to-mounting base thermal resistance characteristics. Consider the repetitive avalanche rating when designing circuits subject to inductive load switching or transient voltage events.
This device belongs to Nexperia's portfolio of automotive-grade power switches designed for high-performance applications. It utilizes advanced Trench 9 technology to achieve superior efficiency compared to standard planar MOSFETs. The product is specifically engineered to meet rigorous automotive reliability standards, ensuring longevity in harsh electrical and thermal environments found in modern vehicle architectures.
BUK9M9R5-40H