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Product Detailed Parameters
- Description：BUK9Q29-60E/SOT8002/MLPAK33
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK9Q29-60EJ is a single N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an SOT8002-3 (MLPAK33) surface-mount device plastic package. The component is fully automotive qualified to the AEC-Q101 standard, supporting operation at junction temperatures up to 175°C. Key electrical characteristics include a drain-source breakdown voltage of 60 V, a continuous drain current rating of 29 A, and a maximum on-state resistance of 29 mΩ.
Feature Summary
- Logic-level compatible gate drive for efficient control
- Very fast switching performance enabled by Trench MOSFET technology
- Fully automotive qualified to AEC-Q101 standard with 175°C operating capability
Applications
- LED lighting systems
- General purpose switching circuits
- DC-DC conversion modules
Procurement Notes
Verify the specific suffix 'J' against official Nexperia documentation to confirm tape-and-reel packaging specifications or marking variations. Ensure the selected distributor provides traceable components compliant with AEC-Q101 standards. Cross-reference the MLPAK33 package dimensions during PCB layout to guarantee mechanical fit and thermal performance requirements are met.
Selection Notes
Select this component for designs requiring high current handling in a compact footprint. The low on-resistance minimizes conduction losses, while the logic-level compatibility simplifies driver circuit design. The 175°C rating makes it suitable for thermally demanding environments where standard commercial grade devices may fail.
Part Context
This part belongs to the Nexperia BUK9Q series of automotive-grade N-channel Trench MOSFETs. The series is engineered for high-performance applications requiring robust reliability and fast switching speeds. The MLPAK33 package offers a balance of thermal efficiency and space-saving design for modern electronic assemblies.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements must match the 60V rating, N-channel configuration, and SOT8002-3 package form factor.
