BUK9Y09-40B,115

Overview

The BUK9Y09-40B is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 6.99 mΩ at VGS = 5 V and 5.88 mΩ at VGS = 10 V. Total power dissipation reaches 105.3 W, with a junction temperature range from -55 °C to 175 °C. Avalanche energy capability is rated at 146 mJ non-repetitive.

Feature Summary

• Compliant with AEC-Q101 standards for automotive reliability
• Optimized for low conduction losses via low on-state resistance
• Compatible with logic level gate drive sources
• Rated for thermally demanding environments up to 175 °C

Applications

• 12 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current handling in compact SMD packages. The logic level gate threshold allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Ensure thermal management strategies account for the 175 °C maximum junction temperature rating to maintain performance under load.

Part Context

This part belongs to Nexperia's BUK9Y series of N-channel enhancement mode MOSFETs utilizing TrenchMOS technology. These devices are engineered for high efficiency and ruggedness in automotive environments. The LFPAK (SOT669) package provides excellent thermal performance and PCB space savings compared to traditional through-hole alternatives.

Replacement Considerations

Check pinout compatibility and electrical parameters against existing designs. Verify that replacement parts meet the same AEC-Q101 qualification requirements if used in automotive contexts.