BUK9Y107-80EX

BUK9Y107-80EX

$0.50
  • Description:MOSFET N-CH 80V 11.8A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:70d27050aa3c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 80V 11.8A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:11.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:98mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:706 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):37W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

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BUK9Y107-80EX

Overview

The Nexperia BUK9Y107-80EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 80 V and a maximum on-state resistance of 107 mΩ at VGS = 5 V. The device supports a continuous drain current of 11.8 A at 25 °C mounting base temperature and handles peak currents up to 47 A. Total power dissipation reaches 37 W under standard conditions. Qualified to the AEC-Q101 standard, it operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

  • Logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
  • Repetitive avalanche rated for robust performance in demanding environments
  • Qualified to AEC-Q101 automotive standards

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the official datasheet, which lists the type number as BUK9Y107-80E. Confirm that the ordering information matches the required packaging version. Ensure the component meets the AEC-Q101 qualification requirements specified for automotive applications before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring low on-state resistance at logic-level gate voltages. The LFPAK56 package provides efficient thermal management suitable for high-power density applications. Consider the 175 °C operating temperature rating for environments with elevated thermal stress. Verify that the 80 V drain-source voltage aligns with the system's electrical requirements.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs. It is designed specifically for high-performance automotive applications where reliability and thermal stability are critical. The LFPAK56 package offers a compact surface-mount solution with a mounting base connected directly to the drain for improved heat dissipation.

Replacement Considerations

Check for direct substitutes within the BUK9Y series or other Nexperia logic level MOSFETs with similar RDS(on) and voltage ratings. Ensure any replacement maintains the LFPAK56 footprint and AEC-Q101 qualification if automotive use is required.

FAQ

What is the gate-source threshold voltage at maximum operating temperature?

The gate-source threshold voltage is guaranteed to be greater than 0.5 V at a junction temperature of 175 °C.

Is the device suitable for automotive applications?

Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.

BUK9Y107-80EXBUK9Y107-80EX
$0.50
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