BUK9Y19-55B,115

Overview

The BUK9Y19-55B,115 is a logic level N-channel enhancement mode power FET utilizing Nexperia High-Performance Automotive TrenchMOS technology. It is designed for automotive critical applications and qualified to AEC-Q101 standards. The device features a 55 V drain-source voltage rating and operates with a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a continuous drain current of 46 A at 25 °C mounting base temperature, a maximum on-state resistance of 19 mΩ at VGS=5V and ID=20A, and a total gate charge of 18 nC. Non-repetitive avalanche energy capability is rated at 80 mJ.

Feature Summary

• Logic level compatible for direct drive from standard logic sources
• Qualified to AEC-Q101 automotive reliability standards
• Rated for operation in thermally demanding environments up to 175 °C
• Very low on-state resistance reduces conduction losses

Applications

• 12 V and 24 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring logic-level gate drive compatibility without additional driver stages. The LFPAK package provides efficient thermal dissipation suitable for high-current applications. Ensure the design accounts for the derating of drain current as mounting base temperature increases beyond 25 °C, referencing the provided thermal impedance curves for accurate power handling calculations.

Part Context

This part belongs to the BUK9Y series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. These devices are specifically engineered for high-performance automotive electronics where reliability under harsh conditions is mandatory. The SOT669 (LFPAK) package integrates a large mounting base connected to the drain for superior heat transfer compared to standard plastic packages.

Replacement Considerations

Public confirmed substitute part numbers: None identified.