BUK9Y1R9-40HX

Overview

The Nexperia BUK9Y1R9-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology housed in a robust LFPAK56 package. It meets AEC-Q101 requirements for high performance and endurance. Key electrical parameters include a drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 120 A at 25 °C mounting base temperature, and a maximum total power dissipation (Ptot) of 217 W. The device features a typical drain-source on-state resistance (RDSon) of 1.44 mΩ at VGS = 10 V and ID = 25 A. Dynamic characteristics include a total gate charge (QG) of 66.4 nTypical.

Feature Summary

• Fully automotive qualified to AEC-Q101 standards with a 175 °C junction temperature rating suitable for thermally demanding environments.
• Employs Trench 9 Superjunction technology to achieve reduced cell pitch, enhancing power density and efficiency while providing improved safe operating area and avalanche capability.
• Features LFPAK Gull Wing leads designed to absorb mechanical stress during thermal cycling, ensuring high board level reliability and enabling visual AOI soldering inspection without x-ray equipment.
• Utilizes LFPAK copper clip technology to improve reliability by reducing thermal resistance and on-state resistance, thereby increasing maximum current capability and improving current spreading.

Applications

• 12 V automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'X' against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure that the component version matches the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '91H940' with the datasheet to authenticate the physical device upon receipt. Confirm compliance with relevant environmental directives like RoHS and REACH as stated in the product data sheet before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. The logic-level gate drive characteristic allows for efficient control using standard 4.5 V or 10 V gate signals. Consider the thermal management requirements associated with the LFPAK56 package, specifically the mounting base connection, to ensure the junction temperature remains within the specified -55 °C to 175 °C operating range under load conditions.

Part Context

This part belongs to the BUK9Y series of N-channel MOSFETs from Nexperia, which are engineered for automotive-grade reliability. The LFPAK56 package, also known as Power-SO8, provides a balance between thermal performance and PCB space efficiency. The use of Trench 9 technology places this device in a category of advanced silicon solutions designed to replace older generation MOSFETs in high-efficiency power conversion and switching applications.

Replacement Considerations

Consult the official Nexperia replacement guide or datasheet cross-reference section for verified substitute part numbers. Do not assume compatibility based solely on package similarity or generic voltage ratings. Verify that any alternative component meets the same AEC-Q101 qualification and thermal resistance specifications.

FAQ

What is the maximum peak drain current for pulsed operation?

The maximum peak drain current (IDM) is 600 A for pulses with a duration of 10 µs or less, provided the mounting base temperature is 25 °C.

How does the LFPAK56 package facilitate manufacturing inspection?

The LFPAK Gull Wing leads allow for visual Automated Optical Inspection (AOI) of soldering joints, eliminating the need for expensive x-ray equipment typically required for traditional QFN packages.

Is this MOSFET rated for repetitive avalanche operation?

Yes, the device is avalanche rugged and suitable for repetitive avalanche operation, with non-repetitive drain-source avalanche energy rated at 108 mJ under specific test conditions.