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Product Detailed Parameters
- Description：MOSFET N-CH 75V 34A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：34A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：28mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 5 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y30-75B/C2,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an LFPAK (SOT669) plastic package. Designed for automotive critical applications, it features AEC-Q101 compliance and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 75 V, continuous drain current of 34 A at 25 °C mounting base temperature, and total power dissipation of 85 W. The device exhibits low on-state resistance, with typical values ranging from 25 mΩ to 30 mΩ at VGS=5V and ID=15A, ensuring efficient performance in switching applications.
Feature Summary
- Low conduction losses achieved through minimized on-state resistance
- Qualified for automotive critical applications via AEC-Q101 compliance
- Compatible with logic level gate drive sources for simplified control
- Operates reliably in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix /C2,115 against official Nexperia documentation to confirm packaging details and availability status. Ensure that the LFPAK SOT669 footprint matches the target PCB design constraints. Confirm RoHS and REACH compliance requirements align with project specifications before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade N-channel MOSFETs with logic-level gate drive compatibility. The high thermal tolerance and low RDS(on) make it suitable for high-current switching tasks in constrained spaces. Evaluate thermal management strategies based on the specified power dissipation limits and safe operating area curves for optimal reliability.
Part Context
This part belongs to the BUK9Y series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. It is specifically engineered for automotive environments, offering enhanced ruggedness and thermal performance compared to standard industrial counterparts. The LFPAK package provides superior thermal conductivity and mechanical stability for surface-mount applications.
Replacement Considerations
Consult official Nexperia substitution guides or datasheets for verified equivalent parts within the BUK9Y family or other automotive-grade N-channel MOSFETs. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
