BUK9Y41-80E,115

$0.61

Description：MOSFET N-CH 80V 24A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fcb31319d122 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 24A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1570 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：64W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y41-80E,115

Overview

The BUK9Y41-80E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 80 V and a continuous drain current of 24 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 45 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 64 W under standard thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for enhanced ruggedness
Designed for thermally demanding environments with 175 °C operating capability

Applications

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring automotive-grade reliability and logic-level drive compatibility. The LFPAK56 package provides efficient thermal management suitable for high-power density layouts. Ensure gate drive voltages align with the specified threshold characteristics for optimal switching performance across the full operating temperature range.

Part Context

This part belongs to Nexperia's automotive MOSFET portfolio, specifically designed using TrenchMOS technology. It targets applications requiring robust switching capabilities within strict automotive qualification frameworks. The LFPAK56 package offers a compact footprint with improved thermal dissipation compared to traditional surface-mount packages.