BUK9Y6R0-60RAX

$1.96

Description：BUK9Y6R0-60RA/SOT669/LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3da8dbd72225 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK9Y6R0-60RA/SOT669/LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK9Y6R0-60RAX

Overview

The BUK9Y6R0-60RAX is a single N-channel logic level MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in an LFPAK56 (Power-SO8) surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 120 A at 25 °C. Its maximum on-resistance is specified as 6.0 mΩ at a gate-source voltage of 10 V. The component supports a junction temperature range from -55 °C to +175 °C and is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

Automotive qualified to AEC-Q101 standards
Logic level gate operation with low threshold voltage
Repetitive avalanche rated capability
Suitable for thermally demanding environments

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'RAX' against official Nexperia documentation to confirm reel specifications and tape-and-reel dimensions. Ensure the selected variant matches the required packaging format for automated assembly processes. Cross-reference the part number with the latest datasheet revision to confirm compliance with RoHS3 and REACH regulations before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high current handling in compact surface-mount footprints. The 6.0 mΩ on-resistance minimizes conduction losses in power switching circuits. Verify that the driving circuit can achieve the necessary gate-source voltage to fully enhance the channel. Consider the thermal management requirements associated with the LFPAK56 package when designing the PCB layout for optimal heat dissipation.

Part Context

This MOSFET belongs to the BUK9Y series, which employs TrenchMOS technology to deliver enhanced performance in automotive-grade applications. The LFPAK56 package provides superior thermal conductivity compared to traditional plastic packages. The product line is designed to meet the rigorous reliability standards required for modern vehicle electronics, offering robustness against harsh operating conditions.