BUK9Y7R2-60E,115

$1.45

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:36cfb7a08b8e Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：5026 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y7R2-60E,115

Overview

The BUK9Y7R2-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 7.2 mΩ at VGS = 5 V and ID = 25 A. Designed for high-performance automotive applications, it complies with the AEC-Q101 standard and supports junction temperatures up to 175 °C.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Repetitive avalanche rated for robust operation
True logic level gate with threshold voltage greater than 0.5 V at 175 °C
Suitable for thermally demanding environments due to 175 °C rating

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the LFPAK56 package variant matches the required PCB footprint and thermal management strategy. Cross-reference the AEC-Q101 qualification status with project requirements before finalizing component selection.

Selection Notes

Select this component when designing circuits requiring low on-state resistance and high current handling within a compact surface-mount form factor. The logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Ensure adequate thermal dissipation paths are designed to maintain junction temperatures within the specified operating range during peak load conditions.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs optimized for automotive use. The LFPAK56 package provides enhanced thermal performance compared to traditional plastic packages, supporting higher power dissipation. It is engineered to meet the rigorous reliability standards required for modern vehicle electronics and power distribution networks.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements from other manufacturers without verifying electrical parameters and thermal characteristics.