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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：80A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：300W
- Operating Temperature：175°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUZ111SL-E3045A is an N-channel power MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a 50V drain-source voltage rating and supports a continuous drain current of 80A. The device is designed for surface mount applications in the TO-263 package. Key electrical characteristics include a maximum power dissipation of 300W and a typical on-resistance of 0.01 ohms. This component is suitable for high-current switching applications requiring robust performance.
Feature Summary
- Utilizes Infineon's SIPMOS technology for enhanced power density
- Designed for surface mount assembly in TO-263 packages
- Supports high continuous drain current capabilities
- N-channel configuration for standard switching applications
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the specific suffix E3045A against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the part number matches the exact electrical specifications required for your design, as variations may exist within the BUZ111S family. Cross-reference with the latest datasheet for thermal resistance values.
Selection Notes
Select this component when a 50V N-channel MOSFET with high current handling (80A) is required in a surface-mount format. Consider the TO-263 package constraints for PCB layout and thermal management. Evaluate the 0.01 ohm on-resistance against conduction loss requirements in your specific application circuit.
Part Context
This part belongs to the BUZ111S series of SIPMOS power transistors. These devices are engineered for general-purpose power switching. The SL variant typically denotes specific packaging or reel configurations. The series is known for combining low on-resistance with rugged avalanche capability.
Replacement Considerations
Check for direct substitutes within the BUZ111S family. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' 50V 80A TO-263 MOSFETs.
