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Product Detailed Parameters
- Description：MOSFET N-CH 200V 21A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ30AHXKSA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a minimum drain-source breakdown voltage of 200 V and a maximum continuous drain current of 21 A. The device exhibits a maximum on-resistance of 0.13 Ω at the specified gate drive conditions. It is housed in a TO-220FP-3 flange mount package with three pins. The component is rated for avalanche energy up to 450 mJ, ensuring robustness against transient overvoltage events.
Feature Summary
- Avalanche-rated capability for handling repetitive avalanche energy
- N-channel enhancement mode metal-oxide semiconductor technology
- Flange mount package design for efficient thermal dissipation
Applications
- High-voltage switching circuits requiring avalanche resilience
- Power conversion systems utilizing N-channel MOSFETs
- Industrial motor control applications
Procurement Notes
Verify the specific suffix HXKSA1 against official Infineon documentation to confirm exact manufacturing lot attributes and compliance status. Ensure the procurement channel provides valid traceability for the TO-220FP-3 package variant. Cross-reference the part number with the latest datasheet revision to confirm parameter consistency before integration into designs.
Selection Notes
Select this component when a 200 V rating and 21 A current capacity are required in a flange-mount configuration. The avalanche rating makes it suitable for inductive load switching where voltage spikes may occur. Compare the 0.13 Ω on-resistance against system conduction loss requirements to ensure thermal management aligns with the package's heat dissipation capabilities.
Part Context
This part belongs to the broader category of N-channel power MOSFETs designed for high-power applications. Infineon utilizes silicon-based technologies to deliver reliable switching performance. The TO-220FP-3 package is standard for through-hole mounting on heatsinks, facilitating use in medium-to-high power electronic systems requiring robust electrical isolation and thermal stability.
Replacement Considerations
Consult official replacement guides for equivalent N-channel MOSFETs with matching 200 V ratings and comparable avalanche energy specifications. Verify pinout compatibility and thermal resistance values before substituting to maintain circuit integrity.
