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Product Detailed Parameters
- Description：MOSFET N-CH 200V 14.5A TO262-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：200mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO262-3-1
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUZ31H3046 is an N-channel enhancement mode SIPMOS power transistor rated for a drain-source breakdown voltage of 200 V and a continuous drain current of 14.5 A at 30 °C case temperature. It features a maximum on-resistance of 0.2 Ω and supports pulsed drain currents up to 58 A. The device is avalanche-rated with a single pulse energy capability of 200 mJ. It operates within a junction temperature range of -55 °C to +150 °C and utilizes a PG-TO-262-3 surface-mount package.
Feature Summary
- Avalanche-rated design supporting periodic and single-pulse energy dissipation
- SIPMOS technology providing robust performance in high-power switching applications
- Enhancement mode operation with low gate threshold voltage for efficient drive
Applications
- High-efficiency DC-DC converters
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific ordering suffix H3046 against official Infineon documentation to confirm package type and RoHS compliance status. Ensure that the PG-TO-262-3 footprint matches the target PCB layout requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a 200 V rating with moderate current handling capabilities. Consider the thermal resistance values when designing heat sinking solutions, as the TO-262-3 package requires adequate copper area for optimal power dissipation under continuous load conditions.
Part Context
This part belongs to the BUZ31 series of SIPMOS transistors manufactured by Infineon Technologies. The series is characterized by its ruggedness and suitability for general-purpose power switching tasks where avalanche resilience is beneficial for circuit protection.
Replacement Considerations
Cross-reference with other N-channel MOSFETs offering similar 200 V ratings and comparable RDS(on) specifications. Verify pinout compatibility and thermal characteristics when substituting with devices from other manufacturers.
