BUZ73AL

Overview

The BUZ73AL is an N-channel, enhancement-mode SIPMOS power transistor manufactured by Infineon Technologies. It features a PG-TO220-3 package and is logic-level compatible. Key electrical parameters include a drain-source breakdown voltage of 200 V, a continuous drain current of 5.5 A at 37 °C case temperature, and a maximum on-resistance of 0.6 Ω at VGS = 5 V. The device supports a pulsed drain current of 22 A and offers avalanche-rated capability with periodic energy handling up to 6.5 mJ. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Avalanche-rated design for robustness against inductive load switching events
• Logic-level gate drive compatibility for direct interfacing with standard logic circuits
• Integrated body diode with defined reverse recovery characteristics

Applications

• Inductive load switching applications requiring avalanche resilience
• High-side or low-side power control circuits
• DC-DC converter topologies utilizing logic-level drive signals

Procurement Notes

Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the component meets the required RoHS compliance standards for the target assembly process. Ensure thermal management designs account for the specified thermal resistance values to maintain junction temperatures within the rated operating range during continuous operation.

Selection Notes

Select this component when a 200 V rating and 5.5 A continuous current capacity are required in a through-hole TO-220 package. The logic-level threshold simplifies gate driver selection compared to standard threshold devices. Consider the avalanche energy rating if the application involves significant inductive kickback without external clamping protection.

Part Context

This part belongs to the BUZ73 series of SIPMOS power transistors from Infineon Technologies. The 'AL' suffix typically denotes specific manufacturing lot or packaging variations within the standard BUZ73 family, sharing identical core electrical specifications with variants like the BUZ73A.

Replacement Considerations

Direct replacements must match the 200 V / 5.5 A / 0.6 Ω specification profile and PG-TO220-3 footprint. Verify pinout compatibility (Gate-Drain-Source) and thermal resistance characteristics. Cross-reference with other manufacturers' N-channel MOSFETs offering equivalent logic-level drive requirements and avalanche ratings.

FAQ

Is the BUZ73AL capable of handling avalanche energy?

Yes, the datasheet specifies it as avalanche-rated, supporting a periodic avalanche energy of 6.5 mJ under defined test conditions.

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±20 V.