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Product Detailed Parameters
- Description：MOSFET N-CH 200V 7A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73H3046XKSA1 is a discontinued N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 200 V and a continuous drain current rating of 5.5 A at 25°C. Its maximum on-resistance is specified at 600 mΩ, with a power dissipation capacity of 40 W. The component operates within a temperature range of -55°C to +150°C and belongs to the OptiMOS product family.
Feature Summary
- N-channel enhancement mode operation for switching applications
- OptiMOS silicon technology platform
- Through-hole mounting capability via TO-220-3 package
Applications
- General purpose power switching
- DC-DC converter circuits
- Motor control systems
Procurement Notes
This component is officially listed as discontinued by the manufacturer. Availability is limited to existing stock or secondary market sources. Verify the authenticity of the part number suffix XKSA1 against official Infineon documentation before procurement. Ensure that any replacement strategy accounts for the end-of-life status to prevent future supply chain disruptions.
Selection Notes
Select this component only if legacy compatibility with the TO-220-3 form factor is required. Compare the 600 mΩ on-resistance and 200 V voltage rating against current design requirements. Consider modern alternatives from the same manufacturer that offer improved thermal performance or lower resistance values while maintaining similar pin configurations.
Part Context
The BUZ73 series represents an older generation of OptiMOS power MOSFETs designed for general-purpose industrial and consumer applications. This specific variant integrates standard N-channel characteristics suitable for medium-power switching tasks. The designation includes specific ordering codes indicating packaging and traceability details defined by Infineon's historical manufacturing standards.
Replacement Considerations
Verify cross-reference data sheets for direct pin-compatible replacements such as the BUZ73A H. Confirm that substitute components meet the original 200 V and 5.5 A specifications. Check for updated thermal resistance values and gate charge parameters to ensure circuit stability during transition.
