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The BY251P-E3/54 is a single silicon rectifier diode from Vishay General Semiconductor, designed for general-purpose applications. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 3 A. The device utilizes a DO-201AD axial through-hole package with isolated case connection. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 150 A, a maximum forward voltage of 1.1 V at rated current, and a low reverse leakage current. It operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix against official Vishay documentation to confirm package type and compliance status. Confirm availability as distribution channels may list obsolete or discontinued variants. Ensure the ordering part number matches the required voltage rating and packaging format before procurement.
Select this component when a 200 V blocking voltage and 3 A continuous current are required in a standard axial leaded package. Consider the thermal management requirements for the DO-201AD housing. Verify that the operating environment stays within the specified -55 °C to +150 °C junction temperature limits.
This part belongs to the SUPERECTIFIER family of high-reliability silicon rectifiers. It shares the DO-201AD form factor with other variants like BY252P and BY254P, differing primarily in reverse voltage ratings. The series is characterized by glass passivation and plastic encapsulation for environmental protection.
Cross-reference with BY251P-E3/65 or BY251P-E3/100 for identical electrical specifications but different packaging formats. Verify pinout compatibility and thermal dissipation capabilities when substituting.