BY25D16ASSJG(T)

Memory IC Overview

The BY25D16ASSJG(T) is a 16M-bit SPI NOR Flash memory by BYTe Semiconductor. It supports Standard and Dual SPI interfaces, with Fast Read reaching 108MHz clock rate. Operating voltage is 2.7V to 3.6V. The device features 4KB sectors and 32/64KB blocks for erasure. Page program time is 0.7ms typical. Endurance is 100k cycles with 20-year data retention. Available in 8-pin SOP packages.

Memory IC Feature Summary

• Supports Dual SPI operation for high-speed data transfer
• Includes hardware and software write protection mechanisms
• Features flexible architecture with uniform sector and block sizes
• Provides low power consumption modes including deep power-down

Memory IC Applications

• Consumer electronics firmware storage
• Industrial control system code execution
• Embedded systems application data logging

Memory IC Procurement Notes

Verify the specific package variant (SOP150, 173, or 208 mil) required for your PCB layout against the ordering information section of the datasheet. Confirm temperature grade (Commercial or Industrial) matches your operational environment specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when dual I/O speed is required within a standard SPI framework. Ensure the host controller supports the necessary instruction set for Dual Output Fast Read. Verify that the 2.7V-3.6V supply range aligns with the system power design constraints.

Memory IC Part Context

This part belongs to the BY25D16AS family of 16M-bit SPI NOR Flash memories. It shares core electrical characteristics and instruction sets with other variants in the series, differing primarily in package options and temperature ratings. It serves as a non-volatile storage solution for microcontroller-based designs.

Memory IC Replacement Considerations

Check for pin-compatible alternatives from the same manufacturer offering different package styles or extended temperature ranges. Ensure any substitute maintains support for Dual SPI instructions if high-speed read performance is critical to the application design.