BY25Q128ESSIG(T)

Memory IC Overview

The BY25Q128ESSIG(T) is a 128M-bit SPI NOR flash memory by BYTe Semiconductor. It supports Standard, Dual, and Quad SPI interfaces with clock frequencies up to 120 MHz. The device operates on a single 2.7V to 3.6V supply. Key electrical parameters include a maximum active current of 10 mA, standby current of 2 uA, and page program time of 0.6 ms typical. It features 100k program-erase cycle endurance and 20-year data retention. The component is housed in an 8-SOP package.

Memory IC Feature Summary

• Supports standard, dual, and quad SPI protocols for flexible data transfer rates.
• Includes hardware and software write protection mechanisms with block protect bits.
• Features execute-in-place (XIP) capability for direct code execution from memory.
• Provides flexible erase architecture with sector and block sizes.

Memory IC Applications

• Firmware storage for embedded systems
• Code execution in place (XIP) applications
• Data logging and configuration storage

Memory IC Procurement Notes

Verify the specific ordering suffix 'T' corresponds to tube packaging as indicated by distributor listings. Confirm the manufacturer is BYTe Semiconductor or Byte Semi. Ensure the voltage range and interface compatibility match the system requirements before procurement.

Memory IC Selection Notes

Select this component for designs requiring high-density non-volatile storage with fast read speeds. The 120 MHz clock rate supports efficient data throughput. Consider the 8-SOP package size for PCB layout constraints. Verify power supply stability within the 2.7V-3.6V range to ensure reliable operation.

Memory IC Part Context

This part belongs to the BY25Q128ES family of serial NOR flash memories. It shares core specifications with other variants like BY25Q128ESSIG(R), differing primarily in packaging type. The ES series is designed for general-purpose storage applications requiring robust data retention and endurance.

Memory IC Replacement Considerations

Check for pin-compatible alternatives from other manufacturers offering similar 128Mb density and SPI interface. Verify that substitute parts support the required 120 MHz clock speed and voltage range. Ensure equivalent write protection features are available if critical to the design.