BY25Q40GLSIG(T)

$0.09

Description：IC FLASH 4MBIT SPI/QUAD 8SOP
Series：-
Mfr：BYTe Semiconductor
Package：Tube

SKU:b91cabb0a4be Category: Memory IC Brand: BYTe Semiconductor

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Product introduction

BY25Q40GLSIG(T) is listed in the Memory IC range at ChipApex. The manufacturer field lists BYTe Semiconductor. Its product description is IC FLASH 4MBIT SPI/QUAD 8SOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for BY25Q40GLSIG(T)

Description：IC FLASH 4MBIT SPI/QUAD 8SOP
Series：-
Mfr：BYTe Semiconductor
Package：Tube
Memory Type：Non-Volatile
Memory Format：FLASH
Technology：FLASH - NOR
Memory Size：4Mbit
Memory Organization：512K x 8
Memory Interface：SPI - Quad I/O
Clock Frequency：50 MHz
Write Cycle Time - Word, Page：3ms, 3ms
Voltage - Supply：1.65V ~ 2V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.209", 5.30mm Width)
Supplier Device Package：8-SOP
Access Time：17 ns

Memory IC datasheet and documents for BY25Q40GLSIG(T)

BY25Q40GLSIG(T)

Memory IC Overview

The BY25Q40GLSIG(T) is a 4M-bit SPI NOR Flash memory by BYTe Semiconductor, designed for code shadowing and data storage. It operates on a single 1.65V to 2.0V supply. The device supports Standard, Dual, and Quad SPI interfaces with read speeds up to 85MHz in non-standard modes. It features flexible erase architectures including 4KB sectors and 32/64KB blocks. Key capabilities include software/hardware write protection, three 512-byte security registers with OTP lock, and program/erase suspend/resume functions. It offers typical 10k cycle endurance and 20-year data retention.

Memory IC Feature Summary

Supports Standard, Dual, and Quad SPI interfaces with software reset capability
Features flexible erase architecture with 4KB sectors and 32/64KB uniform blocks
Includes hardware and software write protection with top/bottom sector selection
Provides low power consumption with active current of 3mA maximum

Memory IC Applications

Code shadowing from Flash to embedded or external RAM
Data storage applications requiring flexible erase granularity
High-volume consumer-based electronic devices

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and temperature range. Ensure the voltage supply requirements align with the 1.65V to 2.0V specification. Confirm that the selected variant meets the necessary commercial or industrial temperature standards for your application environment.

Memory IC Selection Notes

Select this component when a low-voltage (1.65V-2.0V) SPI NOR Flash is required. It is suitable for applications needing code execution from RAM after shadowing. Consider the 10k cycle endurance limit compared to higher-endurance variants. Ensure the system design accommodates the specific voltage range and interface speeds supported by the device.

Memory IC Part Context

This part belongs to the BY25Q40GL series of 4M-bit SPI NOR Flash memories. It shares architectural similarities with other BYTe Semiconductor flash products but is distinct in its lower voltage operating range. The series is optimized for cost-effective, high-volume consumer electronics where power efficiency and code storage are primary concerns.