Memory IC BY25QM1GFSZIG(Y) product image

BY25QM1GFSZIG(Y)

$19.14
  • Description:IC FLASH 1GBIT SPI/QUAD
  • Series:-
  • Mfr:BYTe Semiconductor
  • Package:Tray

SKU:5d18957f44c5 Category: Brand:

  
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BY25QM1GFSZIG(Y) is listed in the Memory IC range at ChipApex. The manufacturer field lists BYTe Semiconductor. Its product description is IC FLASH 1GBIT SPI/QUAD. Review the specifications below when checking this part for your BOM.

Memory IC specifications for BY25QM1GFSZIG(Y)

  • Description:IC FLASH 1GBIT SPI/QUAD
  • Series:-
  • Mfr:BYTe Semiconductor
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:SPI - Quad I/O, QPI
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:50µs, 2.4ms
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:24-TBGA
  • Supplier Device Package:24-TFBGA (8x6)
  • Access Time:7 ns

Memory IC datasheet and documents for BY25QM1GFSZIG(Y)

BY25QM1GFSZIG(Y)

Memory IC Overview

The BY25QM1GFS is a 1Gbit Serial MCP Flash memory constructed by stacking four individual 256M-bit BY25Q256FS dies within a single package. It supports standard SPI, Dual SPI, Quad SPI, and QPI interfaces with data transfer speeds up to 400Mbits/s in Quad I/O and DTR modes. The device operates on a single 2.7V to 3.6V supply voltage and features concurrent read and program/erase operations across stacked dies. It includes software/hardware write protection, XIP capability, and JEDEC standard identification.

Memory IC Feature Summary

  • Stacked Multi-Chip Package architecture enabling independent die access via Software Die Select instruction
  • Supports Concurrent Operations allowing simultaneous reading from an active die while programming or erasing an idle die
  • Flexible Write Protection including Single Die Security Registers, Advanced Block/Sector Protection, and Password Protection
  • Dual and Quad I/O support with Double Transfer Rate (DTR) Read functionality for high throughput

Memory IC Applications

  • Small form factor system designs requiring high density storage
  • Applications demanding high Program/Erase data throughput
  • Systems utilizing Execute In Place (XIP) operations
  • Devices requiring concurrent read and background program/erase capabilities

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and temperature grade. Ensure compatibility with host controller support for stacked die operations and Software Die Select instructions. Confirm that the required interface modes (SPI, QPI, DTR) are supported by the system design.

Memory IC Selection Notes

Select this component when high memory density is required within a low pin-count package. It is suitable for designs needing concurrent operation capabilities to improve system performance. Consider the availability of 24-ball TFBGA packages for small form factors. Verify that the host system can manage multiple die selection and distinct operating modes per die.

Memory IC Part Context

This part belongs to the BY25Q series of Serial NOR Flash memories manufactured by BYTe Semiconductor. It represents an evolution in density by integrating multiple dies into a single MCP unit. The series is designed for general-purpose storage applications requiring reliable non-volatile memory with flexible interface options and robust protection features.

Memory IC Replacement Considerations

Public confirmed substitute part numbers include BY25QM512FS and BY25QM1G1FS. These parts share similar stacked die architectures and interface protocols but may differ in total capacity or specific package configurations.

BY25QM1GFSZIG(Y)BY25QM1GFSZIG(Y)
$19.14
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