BY25QM512FSEIG(R)

Memory IC Overview

The BY25QM512FSEIG(R) is a 512Mbit Serial MCP Flash memory by BYTe Semiconductor, constructed by stacking two 256M-bit BY25Q256FS dies in an 8-pad WSON (6x8mm) package. It supports Standard, Dual, Quad SPI, and QPI interfaces with DTR read capabilities up to 400Mbits/s. Operating on a single 2.7V to 3.6V supply, it features concurrent operations, allowing simultaneous reading from one die while programming or erasing the other. The device includes advanced write protection, software/hardware reset functions, and supports 3-byte or 4-byte addressing modes for flexible system integration.

Memory IC Feature Summary

• Stacked Multi-Chip Package architecture enabling concurrent read and program/erase operations across two independent dies within a standard 8-pin footprint.
• Supports multiple interface modes including Standard SPI, Dual SPI, Quad SPI, and QPI, with Double Transfer Rate (DTR) read speeds reaching 400Mbits/s.
• Advanced security features including discoverable parameters (SFDP), three 512-byte security registers per die, and solid/password-protected block/sector locking mechanisms.
• Flexible power management with low active current consumption and deep power-down mode, alongside hardware and software reset capabilities.

Memory IC Applications

• Small form factor system designs requiring high density in low pin-count packages
• Applications demanding high program/erase data throughput via concurrent multi-die operations
• Embedded systems utilizing execute-in-place (XIP) functionality

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and tape/reel specifications. Ensure compatibility with the required voltage range of 2.7V to 3.6V and temperature grades. Confirm that the host controller supports the necessary SPI/QPI protocols and DTR read modes for optimal performance.

Memory IC Selection Notes

Select this component when high storage density is required within a constrained 8-pin package footprint. It is suitable for designs needing concurrent operation capabilities to improve system efficiency. Ensure the application environment supports the specified operating voltage and temperature ranges. Consider the need for advanced write protection features if data integrity is critical.

Memory IC Part Context

This part belongs to the BY25QM series of Serial MCP Flash memories. It utilizes the BY25Q256FS die technology, offering a significant capacity increase over single-die counterparts while maintaining a compact physical profile. The series is designed for applications where space savings and high-speed data access are prioritized.

Memory IC Replacement Considerations

BY25QM512FSWIG(R)