BY25QM512FSZIG(Y)

Memory IC Overview

The BY25QM512FS is a 512M-bit Serial MCP Flash memory composed of two stacked 256M-bit BY25Q256FS dies within an 8-pin package. It supports Standard, Dual, Quad SPI, and QPI interfaces with DTR read capabilities reaching 400 Mbits/s. The device operates on a single 2.7V to 3.6V supply and features concurrent operations across dies. Key performance metrics include a typical page program time of 0.6ms, sector erase time of 50ms, and block erase times of 0.15s or 0.25s. It offers 100k program-erase cycles and 20-year data retention.

Memory IC Feature Summary

• Stacked Multi-Chip Package (MCP) architecture enabling concurrent read and program/erase operations across two independent dies.
• Supports Double Transfer Rate (DTR) reads and high-speed Quad I/O transfers up to 400 Mbits/s.
• Advanced write protection mechanisms including solid protect, password protection, and top/bottom sector/block locking.
• Factory-assigned unique Die ID for each die, allowing independent software selection via the Software Die Select instruction.

Memory IC Applications

• Small form factor system designs requiring high density in low pin-count packages
• Applications demanding high Program/Erase data throughput via concurrent die operations
• Systems utilizing Execute In Place (XIP) with wrap modes

Memory IC Procurement Notes

Verify the specific package variant required, as the datasheet lists 8-pad WSON (6x8mm), 16-pin SOP (300mil), and TFBGA options. Confirm that the ordering suffix matches the desired physical footprint and temperature range specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when high-density storage is needed within strict pin-count constraints. The dual-die architecture provides superior throughput compared to single-die equivalents due to concurrent operation capabilities. Ensure the host controller supports the necessary SPI modes, including DTR and QPI, to utilize the maximum data transfer speeds.

Memory IC Part Context

This part belongs to the BY25Q series of Serial NOR Flash memories manufactured by BYTe Semiconductor. It utilizes a stacking technology to combine two BY25Q256FS dies into a single package, offering increased capacity without increasing the external interface complexity or pin count.

Memory IC Replacement Considerations

BY25QM512FSWIG(Y)