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Product Detailed Parameters
- Description：DIODE STANDARD 1200V 15A TO220AC
- Series：-
- Mfr：WeEn Semiconductors
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：15A
- Voltage - Forward (Vf) (Max) @ If：3.2 V @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：61 ns
- Current - Reverse Leakage @ Vr：100 µA @ 1200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220AC
- Operating Temperature - Junction：175°C (Max)
- Grade：-
- Qualification：-
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Overview
The BYC15-1200PQ is a hyperfast power diode manufactured by WeEn Semiconductors. It features a 1200V repetitive peak reverse voltage rating and is housed in a TO-220AC package. The device utilizes silicon carbide technology to achieve low forward voltage and negligible reverse recovery charge, ensuring high efficiency in hard switching applications.
Feature Summary
- Hyperfast recovery characteristics with soft recovery behavior
- Low thermal resistance for efficient heat dissipation
- Negligible reverse recovery charge for reduced switching losses
Applications
- High-frequency switched-mode power supplies
- Free-wheeling diodes in motor control circuits
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix 'PQ' against the manufacturer's official datasheet to confirm packaging details and marking orientation. Ensure compatibility with the intended thermal management solution for the TO-220AC package. Confirm RoHS compliance status through the latest product change notification documents provided by WeEn Semiconductors.
Selection Notes
Select this component for applications requiring high blocking voltage and fast switching speeds. The TO-220AC package facilitates through-hole mounting. Consider the thermal resistance specifications when designing heatsinking solutions for continuous current operation in power conversion environments.
Part Context
This part belongs to the BYC series of hyperfast power diodes from WeEn Semiconductors. The series is designed for high-efficiency power conversion, leveraging silicon carbide substrate technology to minimize conduction and switching losses compared to standard silicon rectifiers.
Replacement Considerations
Cross-reference with BYC15-1200P or BYC30-1200P for similar performance profiles. Verify pinout compatibility and thermal characteristics before substitution.
