BYD17K,135

BYD17K,135

  • Description:DIODE AVALANCHE 800V 1.5A MELF
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:37578f2a40a0 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE AVALANCHE 800V 1.5A MELF
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.05 V @ 1 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 800 V
  • Capacitance @ Vr, F:21pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SOD-87
  • Supplier Device Package:MELF
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Grade:-
  • Qualification:-

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BYD17K,135

Overview

The BYD17K,135 is a high-power rectifier diode manufactured by NXP USA Inc., designed for surface mount applications in the MELF package. It functions as an avalanche diode with a maximum repetitive peak reverse voltage of 800V and a forward current rating of 1.5A. The component exhibits a low capacitance of 21pF at 0V bias and 1MHz frequency, alongside a reverse leakage current of 1μA. Compliant with EU environmental standards, it holds ROHS certification and meets REACH directive requirements.

Feature Summary

  • High-power rectification capability for switching applications
  • Avalanche rated construction for robustness
  • Surface mount MELF packaging for automated assembly

Applications

  • Switching power supply circuits
  • Automotive electronics systems
  • Communication infrastructure equipment

Procurement Notes

Verify the specific manufacturer part number BYD17K,135 against official NXP documentation to ensure authenticity. Confirm compliance with RoHS and REACH directives as stated in the datasheet. Check for any specific handling instructions related to the MELF package during procurement and storage processes.

Selection Notes

Select this component when high voltage blocking capability up to 800V is required in a compact surface mount form factor. The low capacitance characteristic makes it suitable for high-frequency switching environments where minimal parasitic effects are critical for circuit performance.

Part Context

This device belongs to the BYD17 series of high-power rectifier diodes from NXP Semiconductors. These components are engineered for reliability in demanding electronic applications, offering a balance of high voltage tolerance and efficient current handling within a standardized MELF housing format.

Replacement Considerations

Consult official NXP substitution guides for verified equivalents. Ensure any replacement maintains the 800V rating, 1.5A current capacity, and MELF package dimensions to preserve circuit integrity.

BYD17K,135BYD17K,135

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