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The BYG20DH is a single-phase silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a glass-passivated junction chip housed in the DO-214AC (SMA) surface-mount package. The device supports a repetitive peak reverse voltage of 200V and an average forward rectified current of 1.5A. Key electrical parameters include a maximum non-repetitive peak forward surge current of 30A, a maximum forward voltage of 1.4V, and a maximum operating temperature of 150°C.
Verify the specific suffix 'DH' against the manufacturer's official datasheet to confirm the exact voltage rating and packaging configuration. Ensure compliance with RoHS Directive 2011/65/EU requirements if applicable to your project specifications. Cross-reference the marking code on the physical component with the official documentation to prevent counterfeit parts.
Select this component when a 200V reverse voltage rating is required in a compact SMA footprint. Consider the 1.5A continuous current limit and 150°C thermal rating for circuit design. Evaluate the fast recovery characteristics against alternative standard rectifiers to ensure compatibility with high-frequency switching topologies.
This part belongs to the BYG series of high-efficiency surface mount rectifiers from Taiwan Semiconductor. The series includes variants with different reverse voltage ratings, such as 200V, 400V, and 600V options, all sharing similar package dimensions and general performance characteristics for efficient power conversion.
The BYG20D is a related variant within the same product family offering identical current and package specifications but potentially differing in specific manufacturing revisions or minor parameter tolerances. Verify functional equivalence before substitution.