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The BYG20G-M3/TR3 is a silicon avalanche rectifier diode manufactured by Vishay General Semiconductor. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 400 V. The device utilizes the DO-214AC (SMA) surface-mount package. Key electrical characteristics include a maximum reverse leakage current of 1 µA at 400 V, a typical forward voltage of 1.4 V at 1.5 A, and a fast reverse recovery time of 75 ns. It operates within a junction temperature range of -55°C to 150°C.
Verify that the ordering suffix matches the required packaging format, as standard and reel variants may differ in physical handling requirements. Confirm RoHS compliance status and specific automotive qualification levels if the application demands AEC-Q101 certification. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability throughout the supply chain.
Select this component when a surface-mount solution with controlled avalanche ruggedness is required for 400 V applications. The 1.5 A current rating suits moderate power levels where compact SMA packaging is preferred over through-hole options. Consider the 75 ns reverse recovery time for efficiency in high-frequency switching circuits compared to standard recovery alternatives.
This part belongs to the BYG20 series of standard avalanche SMD rectifiers. The series offers a wide voltage range from 200 V to 1600 V in the same DO-214AC package footprint. The M3 suffix indicates lead-free construction compliant with RoHS directives, while the HE3 variant denotes an enhanced efficiency version with lower forward voltage drop.
Direct substitutes within the same family include BYG20D-E3/TR3 (200V), BYG20H-E3/TR3 (600V), and BYG20J-E3/TR3 (800V). For equivalent specifications, verify the reverse voltage rating matches the circuit requirements exactly. Cross-reference with other manufacturers' SMA packages only if pinout and thermal characteristics are identical.