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The BYG21M-E3/TR is a fast avalanche rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a single silicon junction housed in a DO-214AC (SMA) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 1.5 A. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 30 A, a maximum reverse recovery time of 0.12 µs, and a maximum forward voltage of 1.5 V. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix configuration against official datasheets to confirm compliance requirements. Ensure the ordering part number matches the exact packaging format required for production lines. Cross-reference the manufacturer's latest documentation to validate RoHS status and moisture sensitivity level classifications before procurement.
Select this component for applications requiring high-voltage blocking capabilities combined with fast switching speeds. The avalanche rating allows for robust performance in inductive load environments where voltage spikes occur. Consider the thermal management requirements associated with the SMA package when designing the printed circuit board layout for optimal heat dissipation.
This component belongs to the BYG series of fast avalanche rectifiers from Vishay. These devices are engineered for high-reliability applications demanding rapid reverse recovery times. The series utilizes glass passivation technology to enhance stability under harsh operating conditions compared to standard epoxy-passivated alternatives.
Direct substitutes must match the 1000V reverse voltage, 1.5A current rating, and DO-214AC package. Verify that alternative fast recovery or avalanche-rated diodes possess equivalent reverse recovery time specifications and thermal characteristics to ensure circuit compatibility.