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The BYG21MHR3G is a fast recovery avalanche rectifier manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 1.5A and a repetitive peak reverse voltage rating of 1000V. The device exhibits a maximum reverse recovery time of 120ns, classifying it as a high-speed switching component. Electrical characteristics include a maximum forward voltage of 1.6V at 1.5A and a leakage current of 1µA at 1000V. The unit operates within a junction temperature range of -55°C to 150°C and utilizes the DO-214AC (SMA) surface-mount package.
Verify the specific suffix 'G' against official datasheets to confirm RoHS compliance and halogen-free status. Confirm that the DO-214AC package dimensions match your PCB footprint requirements. Ensure the 1000V reverse voltage rating aligns with your circuit's peak inverse voltage demands. Check for any recent production change notices regarding material composition or manufacturing location updates.
Select this component when high-voltage blocking capability and fast switching speeds are required simultaneously. The avalanche rating makes it suitable for handling transient energy spikes common in inductive loads. Compare the 120ns reverse recovery time against slower standard recovery diodes to determine if reduced switching losses justify the selection. Verify that the SMA package size fits within the available board space constraints.
This part belongs to the BYG21 series of fast recovery rectifiers from Taiwan Semiconductor. The series is characterized by its combination of high voltage ratings and rapid recovery times. The 'H' suffix typically denotes specific packaging or tape-and-reel configurations, while 'G' indicates environmental compliance. This family targets efficient power conversion in compact electronic designs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for equivalent specifications.